SiC Schottky Diodes Cut Switching Losses

Littelfuse introduces four series 1200V silicon carbide (SiC) Schottky diodes from its GEN2 product family. The LSIC2SD120A08 Series, LSIC2SD120A15 Series, and LSIC2SD120A20 Series offer current ratings of 8A, 15A ,20A, respectively and are provided in the popular TO-220-2L package. Additionally, the LSIC2SD120C08 Series offers a current rating of 8A in a TO-252-2L package. The merged p-n Schottky (MPS) device architecture of the GEN2 SiC Schottky diodes enhances surge capability and reduces leakage current. Replacing standard silicon bipolar power diodes with the new GEN2 SiC Schottky diodes allows circuit designers to reduce switching losses dramatically, accommodate large surge currents without thermal runaway, and operate at junction temperatures as high as 175°C. This allows for substantial increases in power electronics system efficiency and robustness.


Typical applications the latest GEN2 SiC Schottky diodes include:


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  • Active power factor correction (PFC).
  • Buck or boost stages in DC-DC converters.
  • Free-wheeling diodes in inverter stages.
  • High-frequency output rectification. 



LSIC2SD120A08 Series, LSIC2SD120A15 Series, and LSIC2SD120A20 Series GEN2 1200V SiC Schottky Diodes are available in TO-220-2L packages in tubes in quantities of 1,000. Also, LSIC2SD120C08 Series GEN2 1200V SiC Schottky Diodes are available in TO-252-2L package in tape and reel in quantities of 2,500. 


For more info and spec, checkout the LSIC2SD120A08 Series, LSIC2SD120A15 Series, LSIC2SD120A20 Series, and LSIC2SD120C08 Series.