VisIC Technologies, in a manufacturing partnership with TSMC, is now sampling what the company calls the industry's first 1200V GaN modules. The power switch module performs with the highest efficiency in the industry, enabling small yet efficient xEV chargers and uninterruptible power supply (UPS) systems.
The VisIC module, based on TSMC's 650D GaN-on-Silicon process, leverages the wide band gap technology that is revolutionizing the world of xEV power electronics and data center power supplies. TSMC's GaN on Silicon process further provides high yield and fast ramp-up capabilities, while VisIC's GaN transistor design brings unprecedented levels of performance. Switching time below 10 ns is ensured by a high electron mobility transistor (HEMT) design, where electrons flow in a 2-dimentional quantum well, which fundamentally differs from electron flow in SiC MOSFETs.
With 1200V ratings, the GaN module offers typical on resistance of just 40 mΩ. Target applications are power converters for motor drives, three-phase power supplies and other applications requiring current switching up to 50A.
VisIC's 1200V GaN device is a half-bridge module that integrates GaN high-electron mobility transistors (HEMTs) with push-pull and over-current and over-temperature protections in a single package. The design takes advantage of VisIC's innovative Advanced Low Loss Switch (ALL-Switch©) technology, which uses a patented, high-density lateral layout that results in fast switching performance and low RDS(on).
The high-voltage GaN module offers reduced gate charge and capacitances with low RDS(on), so the switching energy for the GaN device is as low as 140 µJ. Consequently, the switching losses are three to five times lower as compared to comparable silicon carbide MOSFETs. With VisIC's 1200V GaN module, designers can greatly reduce system size without compromising performance, so making ultra-small EV chargers for electric cars or highly efficient motor drives for industrial applications.