Graphenea unveils what it calls a ground-breaking range of graphene-based field effect transistors (GFETs) for industrial and commercial use. Reportedly, the GFETs offer sensitivity levels higher than standard FETs, with specified carrier mobility above 1000 cm2/V.s, residual charge carrier density below 2x1012 cm2, and a Dirac point between 10V and 40V.
Graphenea’s GFETs are the latest in their range of graphene-based materials and devices, opening up an almost limitless number of avenues to tech companies in areas of research and data gathering previously restricted due to the high cost and specialist knowledge required to develop these devices inhouse. Recently introduced devices are comprised of two types of graphene field effect transistor matrices: GFET S-10 and GFET S-20. Both matrices offer 36 separate GFETs in an area of just 10 mm2.
The GFET S-10 is designed with GFET sensors distributed evenly across the die, with 30 sensors with Hall bar geometry and six with 2-probe geometry, allowing for varying measurement techniques. The GFETs on the S-20 are separated into four quadrants on the die. All sensors on the GFET S-20 have two-probe geometry. This configuration allows the application of a liquid drop on the device that doesn’t cover the pads, enabling measurements to be taken in a liquid environment or the functionalization of sensors with a liquid medium.
Features in a nutshell:
- Chip dimensions: 10 mm x 10 mm
- Number of GFETs per chip: 36
- Gate oxide material: SiO2
- Gate oxide thickness: 90 nm
- Graphene field-effect mobility: >1000 cm²/V.s
- Residual charge-carrier density: <2x1012 cm-2
- Yield: 75%