Two key applications for ThinMOS include thinning substrates for back-side illuminated imagers and die stacking. The current trend for CMOS imager sensors to use back-side illumination to maximize the fill factor and to allow significant pixel shrinkage has been delayed due to the cost and difficulty of making substrate layers thinner than 5 µm, with adequate uniformity across an entire 300 mm substrate. Additionally, stacking homogeneous memory chips in a single package requires significant thinning of the device substrates, particularly when Wafer Level Packaging technologies, such as through-silicon via (TSV) structures, are incorporated. As TSV structures become even smaller and allow 3D interconnections with thinned, stacked device substrates, it becomes even more critical to have a cost-effective, fully integrated thinning process.
"ThinMOS provides the solution to form ultra-thin device substrates for a variety of applications. Reducing package size and increasing device performance are critical to the future of the semiconductor industry. Back-side illuminated image sensors and 3D interconnect structures would benefit immediately from the utilization of this fully integrated process", according to Mark E. Tuttle, the President of CTI and the inventor of this new approach.
For additional information regarding ThinMOS, potential licensees and investors may contact Mark E. Tuttle at [email protected]. This announcement is not an offer to buy or sell securities.
Cove Technology Inc. was founded by Mr. Tuttle in 2007 to develop new technologies and provide consulting in the areas of semiconductors, wafer-level packaging, solar, and bioelectronics. Mr. Tuttle has over 200 issued patents in many different technology areas and recently published the chapter, "3D Memory Applications," in the Handbook of 3D Integration: Technology and Applications of 3D Integrated Circuits, edited by Garrou et al., 2008, Wiley-VCH.